Bibliographic Details
| Title: |
Full band Monte Carlo simulation of AlInAsSb digital alloys |
| Authors: |
Jiyuan Zheng, Sheikh Z. Ahmed, Yuan Yuan, Andrew Jones, Yaohua Tan, Ann K. Rockwell, Stephen D. March, Seth R. Bank, Avik W. Ghosh, Joe C. Campbell |
| Source: |
InfoMat, Vol 2, Iss 6, Pp 1236-1240 (2020) |
| Publisher Information: |
Wiley, 2020. |
| Publication Year: |
2020 |
| Collection: |
LCC:Materials of engineering and construction. Mechanics of materials
LCC:Information technology |
| Subject Terms: |
AlInAsSb, avalanche photodiode, digital alloy, first principle study, Materials of engineering and construction. Mechanics of materials, TA401-492, Information technology, T58.5-58.64 |
| More Details: |
Abstract Avalanche photodiodes fabricated from AlInAsSb grown as a digital alloy exhibit low excess noise. In this article, we investigate the band structure‐related mechanisms that influence impact ionization. Band‐structures calculated using an empirical tight‐binding method and Monte Carlo simulations reveal that the mini‐gaps in the conduction band do not inhibit electron impact ionization. Good agreement between the full band Monte Carlo simulations and measured noise characteristics is demonstrated. |
| Document Type: |
article |
| File Description: |
electronic resource |
| Language: |
English |
| ISSN: |
2567-3165 |
| Relation: |
https://doaj.org/toc/2567-3165 |
| DOI: |
10.1002/inf2.12112 |
| Access URL: |
https://doaj.org/article/c8188819b1704daab3264a30ecd836ca |
| Accession Number: |
edsdoj.8188819b1704daab3264a30ecd836ca |
| Database: |
Directory of Open Access Journals |
