Single‐Cell Membrane Potential Stimulation and Recording by an Electrolyte‐Gated Organic Field‐Effect Transistor

Bibliographic Details
Title: Single‐Cell Membrane Potential Stimulation and Recording by an Electrolyte‐Gated Organic Field‐Effect Transistor
Authors: Nicolò Lago, Alessandra Galli, Sarah Tonello, Sara Ruiz‐Molina, Saralea Marino, Stefano Casalini, Marco Buonomo, Simona Pisu, Marta Mas‐Torrent, Giada Giorgi, Morten Gram Pedersen, Mario Bortolozzi, Andrea Cester
Source: Advanced Electronic Materials, Vol 11, Iss 2, Pp n/a-n/a (2025)
Publisher Information: Wiley-VCH, 2025.
Publication Year: 2025
Collection: LCC:Electric apparatus and materials. Electric circuits. Electric networks
LCC:Physics
Subject Terms: cell activity recording, cell stimulation, EGOFET, organic Elctronics, Electric apparatus and materials. Electric circuits. Electric networks, TK452-454.4, Physics, QC1-999
More Details: Abstract The reliable stimulation and recording of electrical activity in single cells by means of organic bio‐electronics will be an important milestone in developing new low‐cost and highly biocompatible medical devices. This paper demonstrates extracellular voltage stimulation and single‐cell membrane potential recording by means of a dual‐gate electrolyte‐gated organic field‐effect transistors (EGOFET) employing 2,8‐Difluoro‐5,11‐bis(triethylsilylethynyl)anthradithiophene blended with polystyrene as active material. To obtain a sufficiently small footprint to allow bidirectional communication at the single cell level, the EGOFET technology has been scaled down implementing a Corbino layout, paving the way to the development of novel bidirectional Electrocorticography (ECoG) devices with a high spatial resolution. A specific and thorough analysis of the working mechanisms of EGOFET‐based bio‐sensors is reported, highlighting the importance of the device design and using an appropriate batch of measurements for the recording of the electrical activity of cells.
Document Type: article
File Description: electronic resource
Language: English
ISSN: 2199-160X
Relation: https://doaj.org/toc/2199-160X
DOI: 10.1002/aelm.202400134
Access URL: https://doaj.org/article/7ed6e5111d16483886bdf099f31a2898
Accession Number: edsdoj.7ed6e5111d16483886bdf099f31a2898
Database: Directory of Open Access Journals
More Details
ISSN:2199160X
DOI:10.1002/aelm.202400134
Published in:Advanced Electronic Materials
Language:English