Bibliographic Details
| Title: |
Punch-Through Stop Doping Profile Control via Interstitial Trapping by Oxygen-Insertion Silicon Channel |
| Authors: |
Hideki Takeuchi, Robert J. Mears, Robert J. Stephenson, Marek Hytha, Daniel Connelly, Pavel Fastenko, Richard Burton, Nyles W. Cody, Doran Weeks, Dmitri Choutov, Nidhi Agrawal, Suman Datta |
| Source: |
IEEE Journal of the Electron Devices Society, Vol 6, Pp 481-486 (2018) |
| Publisher Information: |
IEEE, 2018. |
| Publication Year: |
2018 |
| Collection: |
LCC:Electrical engineering. Electronics. Nuclear engineering |
| Subject Terms: |
Oxygen-inserted silicon, transient-enhanced diffusion, CMOS, FinFET, Electrical engineering. Electronics. Nuclear engineering, TK1-9971 |
| More Details: |
Interstitial trapping by oxygen-inserted silicon channel results in blocking of boron and phosphorus transient enhanced diffusion as well as retention of channel boron profiles during the gate oxidation process. The enhanced doping profile control capability is applicable to punch-through stop of advanced CMOS devices and its benefits to 28 nm planar CMOS and 20 nm bulk FinFET devices projected by TCAD are discussed. |
| Document Type: |
article |
| File Description: |
electronic resource |
| Language: |
English |
| ISSN: |
2168-6734 |
| Relation: |
https://ieeexplore.ieee.org/document/8094923/; https://doaj.org/toc/2168-6734 |
| DOI: |
10.1109/JEDS.2017.2769682 |
| Access URL: |
https://doaj.org/article/79e4bf760b024923ad9ffad69e37f5e5 |
| Accession Number: |
edsdoj.79e4bf760b024923ad9ffad69e37f5e5 |
| Database: |
Directory of Open Access Journals |
