Bibliographic Details
| Title: |
High performance and transparent multilayer MoS2 transistors: Tuning Schottky barrier characteristics |
| Authors: |
Young Ki Hong, Geonwook Yoo, Junyeon Kwon, Seongin Hong, Won Geun Song, Na Liu, Inturu Omkaram, Byungwook Yoo, Sanghyun Ju, Sunkook Kim, Min Suk Oh |
| Source: |
AIP Advances, Vol 6, Iss 5, Pp 055026-055026-6 (2016) |
| Publisher Information: |
AIP Publishing LLC, 2016. |
| Publication Year: |
2016 |
| Collection: |
LCC:Physics |
| Subject Terms: |
Physics, QC1-999 |
| More Details: |
Various strategies and mechanisms have been suggested for investigating a Schottky contact behavior in molybdenum disulfide (MoS2) thin-film transistor (TFT), which are still in much debate and controversy. As one of promising breakthrough for transparent electronics with a high device performance, we have realized MoS2 TFTs with source/drain electrodes consisting of transparent bi-layers of a conducting oxide over a thin film of low work function metal. Intercalation of a low work function metal layer, such as aluminum, between MoS2 and transparent source/drain electrodes makes it possible to optimize the Schottky contact characteristics, resulting in about 24-fold and 3 orders of magnitude enhancement of the field-effect mobility and on-off current ratio, respectively, as well as transmittance of 87.4 % in the visible wavelength range. |
| Document Type: |
article |
| File Description: |
electronic resource |
| Language: |
English |
| ISSN: |
2158-3226 |
| Relation: |
https://doaj.org/toc/2158-3226 |
| DOI: |
10.1063/1.4953062 |
| Access URL: |
https://doaj.org/article/79df7228df6347128f3761c43726890a |
| Accession Number: |
edsdoj.79df7228df6347128f3761c43726890a |
| Database: |
Directory of Open Access Journals |
