Plasmon-Enhanced Hot-Electron Photodetector Based on Au/GaN-Nanopillar Arrays for Short-Wave-Infrared Detection
Title: | Plasmon-Enhanced Hot-Electron Photodetector Based on Au/GaN-Nanopillar Arrays for Short-Wave-Infrared Detection |
---|---|
Authors: | Xiaobing Tang, Zhibiao Hao, Lai Wang, Jiadong Yu, Xun Wang, Yi Luo, Changzheng Sun, Yanjun Han, Bing Xiong, Jian Wang, Hongtao Li |
Source: | Applied Sciences, Vol 12, Iss 9, p 4277 (2022) |
Publisher Information: | MDPI AG, 2022. |
Publication Year: | 2022 |
Collection: | LCC:Technology LCC:Engineering (General). Civil engineering (General) LCC:Biology (General) LCC:Physics LCC:Chemistry |
Subject Terms: | surface plasmon, hot electron, Schottky barrier height, GaN nanostructure, photodetector, Technology, Engineering (General). Civil engineering (General), TA1-2040, Biology (General), QH301-705.5, Physics, QC1-999, Chemistry, QD1-999 |
More Details: | The complex device structure and costly preparation process have hindered the development and application of the GaN-based ultraviolet and infrared (UV–IR) dual-color photodetector. In this work, we designed and prepared an Au/GaN-nanopillar-based hot-electron photodetector that can operate in the short-wave infrared range, well below the GaN bandgap energy. A suitable Schottky barrier height was developed for a higher photo-to-dark current ratio by post-etching annealing. The surface plasmons generated by Au/GaN-nanopillar arrays could effectively improve the light absorption efficiency. As a result, compared with the planar device, the responsivity of the Au/GaN-nanopillar device could be enhanced by about two orders of magnitude. With the advantages of a simple structure and easy preparation, the proposed devices are promising candidates for application in UV–IR dual-color photodetection. |
Document Type: | article |
File Description: | electronic resource |
Language: | English |
ISSN: | 12094277 2076-3417 |
Relation: | https://www.mdpi.com/2076-3417/12/9/4277; https://doaj.org/toc/2076-3417 |
DOI: | 10.3390/app12094277 |
Access URL: | https://doaj.org/article/7902e69d84b54ac09c2d62f8563690de |
Accession Number: | edsdoj.7902e69d84b54ac09c2d62f8563690de |
Database: | Directory of Open Access Journals |
ISSN: | 12094277 20763417 |
---|---|
DOI: | 10.3390/app12094277 |
Published in: | Applied Sciences |
Language: | English |