Fabrication of Tungsten Oxide Nanowalls through HFCVD for Improved Electrochemical Detection of Methylamine

Bibliographic Details
Title: Fabrication of Tungsten Oxide Nanowalls through HFCVD for Improved Electrochemical Detection of Methylamine
Authors: Mohammad Imran, Eun-Bi Kim, Tae-Geum Kim, Sadia Ameen, Mohammad Shaheer Akhtar, Dong-Heui Kwak
Source: Micromachines, Vol 15, Iss 4, p 441 (2024)
Publisher Information: MDPI AG, 2024.
Publication Year: 2024
Collection: LCC:Mechanical engineering and machinery
Subject Terms: WO3, HFCVD, nanowalls, methylamine, electrochemical sensor, cyclic voltammetry, Mechanical engineering and machinery, TJ1-1570
More Details: In this study, well-defined tungsten oxide (WO3) nanowall (NW) thin films were synthesized via a controlled hot filament chemical vapor deposition (HFCVD) technique and applied for electrochemical detection of methylamine toxic substances. Herein, for the thin-film growth by HFCVD, the temperature of tungsten (W) wire was held constant at ~1450 °C and gasification was performed by heating of W wire using varied substrate temperatures ranging from 350 °C to 450 °C. At an optimized growth temperature of 400 °C, well-defined and extremely dense WO3 nanowall-like structures were developed on a Si substrate. Structural, crystallographic, and compositional characterizations confirmed that the deposited WO3 thin films possessed monoclinic crystal structures of high crystal quality. For electrochemical sensing applications, WO3 NW thin film was used as an electrode, and cyclic voltammetry (CV) and linear sweep voltammetry (LSV) were measured with a wide concentration range of 20 μM~1 mM of methylamine. The fabricated electrochemical sensor achieved a sensitivity of ~183.65 μA mM−1 cm−2, a limit of detection (LOD) of ~20 μM and a quick response time of 10 s. Thus, the fabricated electrochemical sensor exhibited promising detection of methylamine with considerable stability and reproducibility.
Document Type: article
File Description: electronic resource
Language: English
ISSN: 2072-666X
Relation: https://www.mdpi.com/2072-666X/15/4/441; https://doaj.org/toc/2072-666X
DOI: 10.3390/mi15040441
Access URL: https://doaj.org/article/610fd884736f461290c5258f6ee30242
Accession Number: edsdoj.610fd884736f461290c5258f6ee30242
Database: Directory of Open Access Journals
More Details
ISSN:2072666X
DOI:10.3390/mi15040441
Published in:Micromachines
Language:English