Electrical detection of mobile skyrmions with 100% tunneling magnetoresistance in a racetrack-like device

Bibliographic Details
Title: Electrical detection of mobile skyrmions with 100% tunneling magnetoresistance in a racetrack-like device
Authors: Mengqi Zhao, Aitian Chen, Pei-Yuan Huang, Chen Liu, Laichuan Shen, Jiahao Liu, Le Zhao, Bin Fang, Wen-Cheng Yue, Dongxing Zheng, Ledong Wang, Hao Bai, Ka Shen, Yan Zhou, Shasha Wang, Enlong Liu, Shikun He, Yong-Lei Wang, Xixiang Zhang, Wanjun Jiang
Source: npj Quantum Materials, Vol 9, Iss 1, Pp 1-7 (2024)
Publisher Information: Nature Portfolio, 2024.
Publication Year: 2024
Collection: LCC:Materials of engineering and construction. Mechanics of materials
LCC:Atomic physics. Constitution and properties of matter
Subject Terms: Materials of engineering and construction. Mechanics of materials, TA401-492, Atomic physics. Constitution and properties of matter, QC170-197
More Details: Abstract Magnetic skyrmions are topological spin textures that are regarded as promising information carriers for next-generation spintronic memory and computing devices. For practical applications, their deterministic generation, manipulation, and efficient detection are the most critical aspects. Although the generation and manipulation of skyrmions have been extensively studied, efficient electrical detection of mobile skyrmions by using techniques that are compatible with modern magnetic memory technology, remains to be adequately addressed. Here, through integrating magnetic multilayers that host nanoscale skyrmions, together with the magnetic tunnel junctions (MTJ), we demonstrate the electrical detection of skyrmions by using the tunneling magnetoresistance (TMR) effect with a TMR ratio that reaches over 100% at room temperature. By building prototype three-terminal racetrack-like devices, we further show the electrical detection of mobile skyrmions by recording the time-dependent TMR ratios. Along with many recent developments, our results could advance the development of skyrmionic memory and logic devices.
Document Type: article
File Description: electronic resource
Language: English
ISSN: 2397-4648
Relation: https://doaj.org/toc/2397-4648
DOI: 10.1038/s41535-024-00655-1
Access URL: https://doaj.org/article/60747ac8b9934dd8a277717c444c8dbe
Accession Number: edsdoj.60747ac8b9934dd8a277717c444c8dbe
Database: Directory of Open Access Journals
More Details
ISSN:23974648
DOI:10.1038/s41535-024-00655-1
Published in:npj Quantum Materials
Language:English