| Title: |
Oxygen effect on the performance of β-Ga2O3 enhancement mode MOSFETs heteroepitaxially grown on a sapphire |
| Authors: |
Yueh-Han Chuang, Fu-Gow Tarntair, Tzu-Wei Wang, Anoop Kumar Singh, Po-Liang Liu, Dong-Sing Wuu, Hao-Chung Kuo, Xiuling Li, Ray-Hua Horng |
| Source: |
Applied Surface Science Advances, Vol 26, Iss , Pp 100711- (2025) |
| Publisher Information: |
Elsevier, 2025. |
| Publication Year: |
2025 |
| Collection: |
LCC:Materials of engineering and construction. Mechanics of materials |
| Subject Terms: |
Al diffusion, ꞵ-Ga2O3, Enhancement-mode MOSFETs, Gate field plate, MOCVD, Oxygen vacancies, Materials of engineering and construction. Mechanics of materials, TA401-492, Industrial electrochemistry, TP250-261 |
| More Details: |
β-Ga2O3 is regarded as a promising candidate for next-generation high-power devices; however, the impact of material quality on device performance is significant and not yet well understood. In this study, β-Ga2O3 heteroepilayers were grown on c-plane sapphire using metalorganic chemical vapor deposition (MOCVD) at three different O2 flow rates. Enhancement-mode β-Ga2O3 metal-oxide-semiconductor field-effect transistors (MOSFETs) were then fabricated with a gate-recessed process, incorporating a 5 µm gate field plate structure. Higher O2 flow rates resulted in increased breakdown voltage. X-ray photoelectron spectroscopy analysis suggests that this improvement is due to reduced oxygen vacancies and minimized Al diffusion from the substrate. First-principle simulations further confirmed this phenomenon. |
| Document Type: |
article |
| File Description: |
electronic resource |
| Language: |
English |
| ISSN: |
2666-5239 |
| Relation: |
http://www.sciencedirect.com/science/article/pii/S2666523925000200; https://doaj.org/toc/2666-5239 |
| DOI: |
10.1016/j.apsadv.2025.100711 |
| Access URL: |
https://doaj.org/article/53f5fd5d32da4700a7048af9330367ab |
| Accession Number: |
edsdoj.53f5fd5d32da4700a7048af9330367ab |
| Database: |
Directory of Open Access Journals |
