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Emission characteristics variation of GaAs0.92Sb0.08/Al0.3Ga0.7As strained multiple quantum wells caused by rapid thermal annealing

Bibliographic Details
Title: Emission characteristics variation of GaAs0.92Sb0.08/Al0.3Ga0.7As strained multiple quantum wells caused by rapid thermal annealing
Authors: Dengkui Wang, Xian Gao, Jilong Tang, Xuan Fang, Dan Fang, Xinwei Wang, Fengyuan Lin, Xiaohua Wang, Rui Chen, Zhipeng Wei
Source: Scientific Reports, Vol 11, Iss 1, Pp 1-7 (2021)
Publisher Information: Nature Portfolio, 2021.
Publication Year: 2021
Collection: LCC:Medicine
LCC:Science
Subject Terms: Medicine, Science
More Details: Abstract Rapid thermal annealing is an effective way to improve the optical properties of semiconductor materials and devices. In this paper, the emission characteristics of GaAs0.92Sb0.08/Al0.3Ga0.7As multiple quantum wells, which investigated by temperature-dependent photoluminescence, are adjusted through strain and interfacial diffusion via rapid thermal annealing. The light-hole (LH) exciton emission and the heavy-hole (HH) exciton emission are observed at room temperature. After annealing, the LH and HH emission peaks have blue shift. It can be ascribed to the variation of interfacial strain at low annealing temperature and the interfacial diffusion between barrier layer and well layer at high annealing temperature. This work is of great significance for emission adjustment of strained multiple quantum wells.
Document Type: article
File Description: electronic resource
Language: English
ISSN: 2045-2322
Relation: https://doaj.org/toc/2045-2322
DOI: 10.1038/s41598-020-80796-y
Access URL: https://doaj.org/article/491943fc27bc4b96ba5c7795a09df482
Accession Number: edsdoj.491943fc27bc4b96ba5c7795a09df482
Database: Directory of Open Access Journals
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More Details
ISSN:20452322
DOI:10.1038/s41598-020-80796-y
Published in:Scientific Reports
Language:English