Tunable RF Phase Shifters Based on Vanadium Dioxide Metal Insulator Transition

Bibliographic Details
Title: Tunable RF Phase Shifters Based on Vanadium Dioxide Metal Insulator Transition
Authors: Emanuele Andrea Casu, Nicolo Oliva, Matteo Cavalieri, Andrei A. Muller, Alessandro Fumarola, Wolfgang A. Vitale, Anna Krammer, Andreas Schuler, Montserrat Fernandez-Bolanos, Adrian M. Ionescu
Source: IEEE Journal of the Electron Devices Society, Vol 6, Pp 965-971 (2018)
Publisher Information: IEEE, 2018.
Publication Year: 2018
Collection: LCC:Electrical engineering. Electronics. Nuclear engineering
Subject Terms: Vanadium dioxide, phase transition, RF switch, true-time delay, phase shifter, tunable capacitor, Electrical engineering. Electronics. Nuclear engineering, TK1-9971
More Details: This paper presents the design, fabrication, and electrical characterization of a reconfigurable RF capacitive shunt switch that exploits the electro-thermally triggered vanadium dioxide (VO2) insulator to metal phase transition. The RF switch is further exploited to build wide-band RF true-time delay tunable phase shifters. By triggering the VO2 switch insulator to metal transition (IMT), the total capacitance can be reconfigured from the series of two metal-insulator-metal (MIM) capacitors to a single MIM capacitor. The effect of bias voltage on losses and phase shift is investigated, explained, and compared to the state of the art in the field. We report thermal actuation of the devices by heating the devices above VO2 IMT temperature. By cascading multiple stages a maximum of 40° per dB loss close to 7 GHz were obtained.
Document Type: article
File Description: electronic resource
Language: English
ISSN: 2168-6734
Relation: https://ieeexplore.ieee.org/document/8368187/; https://doaj.org/toc/2168-6734
DOI: 10.1109/JEDS.2018.2837869
Access URL: https://doaj.org/article/4004c1ecf9254547beade7fb39aff1b8
Accession Number: edsdoj.4004c1ecf9254547beade7fb39aff1b8
Database: Directory of Open Access Journals
More Details
ISSN:21686734
DOI:10.1109/JEDS.2018.2837869
Published in:IEEE Journal of the Electron Devices Society
Language:English