New DTMOS Based High Frequency Memristor Emulator and Its Nonlinear Applications

Bibliographic Details
Title: New DTMOS Based High Frequency Memristor Emulator and Its Nonlinear Applications
Authors: Pushkar Srivastava, R. K. Sharma, R. K. Gupta, Firat Kacar, Rajeev Kumar Ranjan
Source: IEEE Access, Vol 12, Pp 9195-9205 (2024)
Publisher Information: IEEE, 2024.
Publication Year: 2024
Collection: LCC:Electrical engineering. Electronics. Nuclear engineering
Subject Terms: Memristor, emulator, MOSFET, DTMOS, memductance, hysteresis loop, Electrical engineering. Electronics. Nuclear engineering, TK1-9971
More Details: A new proposition of passive (no external DC bias) memristor emulator (MRE) utilizing DTMOS technique which consists of four MOSFETs and a capacitor has been presented. The proposed MRE exhibits high operating frequency $(\sim 500~\mathrm {MHz})$ , zero static power and shows incremental behavior. The conventional mathematical equation of MRE has been derived considering the second-order effects of all the MOSFETs utilized. The proposed circuit has been simulated by the Cadence Virtuoso (IC617) spectre tool using $180 \mathrm {~nm}$ technology parameters. The layout occupies $1305 \mu \mathrm {m}^{2}$ area. The experimental verification has been carried out utilizing ALD1116 and ALD1117 dual N-channel and P-channel MOSFET arrays to demonstrate the practical viability. Finally, different possible applications namely; analog filters, oscillators (simple and chaotic), Schmitt trigger, Amoeba learning have been realized using proposed MRE to show its neuromorphic capability. Also, new logical AND & OR and NOT circuit configurations have been designed using proposed MRE.
Document Type: article
File Description: electronic resource
Language: English
ISSN: 2169-3536
Relation: https://ieeexplore.ieee.org/document/10364830/; https://doaj.org/toc/2169-3536
DOI: 10.1109/ACCESS.2023.3344311
Access URL: https://doaj.org/article/c37d817b537f4ae2960ae5b1307b1344
Accession Number: edsdoj.37d817b537f4ae2960ae5b1307b1344
Database: Directory of Open Access Journals
More Details
ISSN:21693536
DOI:10.1109/ACCESS.2023.3344311
Published in:IEEE Access
Language:English