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Enhanced Performance of Organic Field‐Effect Transistor with Bi‐Functional N‐Type Organic Semiconductor Layer

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Title: Enhanced Performance of Organic Field‐Effect Transistor with Bi‐Functional N‐Type Organic Semiconductor Layer
Authors: Tianpeng Yu, Shuyi Hou, Zhenliang Liu, Yiru Wang, Jiang Yin, Xu Gao, Nannan Liu, Guoliang Yuan, Lei Wu, Yidong Xia, Zhiguo Liu
Source: Advanced Electronic Materials, Vol 10, Iss 3, Pp n/a-n/a (2024)
Publisher Information: Wiley-VCH, 2024.
Publication Year: 2024
Collection: LCC:Electric apparatus and materials. Electric circuits. Electric networks
LCC:Physics
Subject Terms: bi‐functional, endurance characteristic, hole‐trapping, organic field‐effect transistor, pentacene, Electric apparatus and materials. Electric circuits. Electric networks, TK452-454.4, Physics, QC1-999
More Details: Abstract Organic field‐effect transistors (OFETs) hold great promise for applications in non‐volatile memories, detectors, and artificial synapses due to the good flexibility and biocompatibility. However, certain drawbacks such as high operating voltages and significant degradation in endurance characteristics have hindered their practical implementations. Herein, a novel approach is proposed to enhance the performance of OFETs by incorporating a bi‐functional n‐type polymer semiconductor interlayer, Poly‐{[N,N'‐bis(2‐octyldodecyl)naphthalene‐1,4,5,8‐bis(dicarboximide)‐2,6‐diyl]‐alt‐5,5′‐(2,2′‐bithiophene)} (N2200), into a pentacene OFET structure. The device exhibits remarkable improvements, with reliable P/E operation cycles of over than 104 and a retention time of more than 10 years. On one hand, the inclusion of N2200 as an n‐type semiconductor effectively reduces the height of hole‐injection barrier for trapping and thus reducing the working voltage based on the electrostatic induction theory. On the other hand, n‐type semiconductor N2200 serves as a native hole‐consumption (or hole‐trapping) dielectric, and its narrower bandgap restrains the formation of deep hole‐traps, thus favoring the endurance characteristics of the OFET.
Document Type: article
File Description: electronic resource
Language: English
ISSN: 2199-160X
40598292
Relation: https://doaj.org/toc/2199-160X
DOI: 10.1002/aelm.202300651
Access URL: https://doaj.org/article/371e6472a17a4059829275f180ebd0e6
Accession Number: edsdoj.371e6472a17a4059829275f180ebd0e6
Database: Directory of Open Access Journals
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  Data: Advanced Electronic Materials, Vol 10, Iss 3, Pp n/a-n/a (2024)
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  Data: Abstract Organic field‐effect transistors (OFETs) hold great promise for applications in non‐volatile memories, detectors, and artificial synapses due to the good flexibility and biocompatibility. However, certain drawbacks such as high operating voltages and significant degradation in endurance characteristics have hindered their practical implementations. Herein, a novel approach is proposed to enhance the performance of OFETs by incorporating a bi‐functional n‐type polymer semiconductor interlayer, Poly‐{[N,N'‐bis(2‐octyldodecyl)naphthalene‐1,4,5,8‐bis(dicarboximide)‐2,6‐diyl]‐alt‐5,5′‐(2,2′‐bithiophene)} (N2200), into a pentacene OFET structure. The device exhibits remarkable improvements, with reliable P/E operation cycles of over than 104 and a retention time of more than 10 years. On one hand, the inclusion of N2200 as an n‐type semiconductor effectively reduces the height of hole‐injection barrier for trapping and thus reducing the working voltage based on the electrostatic induction theory. On the other hand, n‐type semiconductor N2200 serves as a native hole‐consumption (or hole‐trapping) dielectric, and its narrower bandgap restrains the formation of deep hole‐traps, thus favoring the endurance characteristics of the OFET.
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        Value: 10.1002/aelm.202300651
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      – Text: English
    Subjects:
      – SubjectFull: bi‐functional
        Type: general
      – SubjectFull: endurance characteristic
        Type: general
      – SubjectFull: hole‐trapping
        Type: general
      – SubjectFull: organic field‐effect transistor, pentacene
        Type: general
      – SubjectFull: Electric apparatus and materials. Electric circuits. Electric networks
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      – SubjectFull: TK452-454.4
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              Type: published
              Y: 2024
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