Enhanced Performance of Organic Field‐Effect Transistor with Bi‐Functional N‐Type Organic Semiconductor Layer
| Title: | Enhanced Performance of Organic Field‐Effect Transistor with Bi‐Functional N‐Type Organic Semiconductor Layer |
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| Authors: | Tianpeng Yu, Shuyi Hou, Zhenliang Liu, Yiru Wang, Jiang Yin, Xu Gao, Nannan Liu, Guoliang Yuan, Lei Wu, Yidong Xia, Zhiguo Liu |
| Source: | Advanced Electronic Materials, Vol 10, Iss 3, Pp n/a-n/a (2024) |
| Publisher Information: | Wiley-VCH, 2024. |
| Publication Year: | 2024 |
| Collection: | LCC:Electric apparatus and materials. Electric circuits. Electric networks LCC:Physics |
| Subject Terms: | bi‐functional, endurance characteristic, hole‐trapping, organic field‐effect transistor, pentacene, Electric apparatus and materials. Electric circuits. Electric networks, TK452-454.4, Physics, QC1-999 |
| More Details: | Abstract Organic field‐effect transistors (OFETs) hold great promise for applications in non‐volatile memories, detectors, and artificial synapses due to the good flexibility and biocompatibility. However, certain drawbacks such as high operating voltages and significant degradation in endurance characteristics have hindered their practical implementations. Herein, a novel approach is proposed to enhance the performance of OFETs by incorporating a bi‐functional n‐type polymer semiconductor interlayer, Poly‐{[N,N'‐bis(2‐octyldodecyl)naphthalene‐1,4,5,8‐bis(dicarboximide)‐2,6‐diyl]‐alt‐5,5′‐(2,2′‐bithiophene)} (N2200), into a pentacene OFET structure. The device exhibits remarkable improvements, with reliable P/E operation cycles of over than 104 and a retention time of more than 10 years. On one hand, the inclusion of N2200 as an n‐type semiconductor effectively reduces the height of hole‐injection barrier for trapping and thus reducing the working voltage based on the electrostatic induction theory. On the other hand, n‐type semiconductor N2200 serves as a native hole‐consumption (or hole‐trapping) dielectric, and its narrower bandgap restrains the formation of deep hole‐traps, thus favoring the endurance characteristics of the OFET. |
| Document Type: | article |
| File Description: | electronic resource |
| Language: | English |
| ISSN: | 2199-160X 40598292 |
| Relation: | https://doaj.org/toc/2199-160X |
| DOI: | 10.1002/aelm.202300651 |
| Access URL: | https://doaj.org/article/371e6472a17a4059829275f180ebd0e6 |
| Accession Number: | edsdoj.371e6472a17a4059829275f180ebd0e6 |
| Database: | Directory of Open Access Journals |
| ISSN: | 2199160X 40598292 |
|---|---|
| DOI: | 10.1002/aelm.202300651 |
| Published in: | Advanced Electronic Materials |
| Language: | English |