Bibliographic Details
| Title: |
Metal‐to‐insulator transition in oxide semimetals by anion doping |
| Authors: |
Haitao Hong, Huimin Zhang, Shan Lin, Jeffrey A. Dhas, Binod Paudel, Shuai Xu, Shengru Chen, Ting Cui, Yiyan Fan, Dongke Rong, Qiao Jin, Zihua Zhu, Yingge Du, Scott A. Chambers, Chen Ge, Can Wang, Qinghua Zhang, Le Wang, Kui‐juan Jin, Shuai Dong, Er‐Jia Guo |
| Source: |
Interdisciplinary Materials, Vol 3, Iss 3, Pp 358-368 (2024) |
| Publisher Information: |
Wiley, 2024. |
| Publication Year: |
2024 |
| Collection: |
LCC:Materials of engineering and construction. Mechanics of materials |
| Subject Terms: |
anion doping, metal‐to‐insulator transition, oxide semimetal, phase transition, Materials of engineering and construction. Mechanics of materials, TA401-492 |
| More Details: |
Abstract Oxide semimetals exhibiting both nontrivial topological characteristics stand as exemplary parent compounds and multiple degrees of freedom, offering a promise for the realization of novel electronic states. In this work, we report the structural and transport phase transition in an oxide semimetal, SrNbO3, achieved through effective anion doping. Notably, the resistivity increased by more than three orders of magnitude at room temperature upon nitrogen‐doping. The extent of electronic modulation in SrNbO3 is strongly correlated with misfit strain, underscoring its phase instability to both chemical doping and crystallographic symmetry variations. Using first‐principles calculations, we discern that elevating the level of nitrogen doping induces an upward shift in the conductive bands of SrNbO3−δNδ. Consequently, a transition from a metallic state to an insulating state becomes apparent as the nitrogen concentration reaches a threshold of 1/3. This investigation shows effective anion engineering in oxide semimetals, offering pathways for manipulating their physical properties. |
| Document Type: |
article |
| File Description: |
electronic resource |
| Language: |
English |
| ISSN: |
2767-441X |
| Relation: |
https://doaj.org/toc/2767-441X |
| DOI: |
10.1002/idm2.12158 |
| Access URL: |
https://doaj.org/article/2698fa06ba8743258b841c490c1e0e4d |
| Accession Number: |
edsdoj.2698fa06ba8743258b841c490c1e0e4d |
| Database: |
Directory of Open Access Journals |
