Bibliographic Details
| Title: |
Memristors based on two-dimensional h-BN materials: synthesis, mechanism, optimization and application |
| Authors: |
Shaojie Zhang, Ye Tao, Shiwei Qin, Dong Li, Kunkun Cao, Lin Lv, Guokun Ma, Yiheng Rao, Houzhao Wan, Wang Hao |
| Source: |
npj 2D Materials and Applications, Vol 8, Iss 1, Pp 1-25 (2024) |
| Publisher Information: |
Nature Portfolio, 2024. |
| Publication Year: |
2024 |
| Collection: |
LCC:Materials of engineering and construction. Mechanics of materials
LCC:Chemistry |
| Subject Terms: |
Materials of engineering and construction. Mechanics of materials, TA401-492, Chemistry, QD1-999 |
| More Details: |
Abstract Memristors offer vast application opportunities in storage, logic devices, and computation due to their nonvolatility, low power consumption, and fast operational speeds. Two-dimensional materials, characterized by their novel mechanisms, ultra-thin channels, high mechanical flexibility, and superior electrical properties, demonstrate immense potential in the domain of high-density, fast, and energy-efficient memristors. Hexagonal boron nitride (h-BN), as a new two-dimensional material, has the characteristics of high thermal conductivity, flexibility, and low power consumption, and has a significant application prospect in the field of memristor. In this paper, the recent research progress of the h-BN memristor is reviewed from the aspects of device fabrication, resistance mechanism, and application prospect. |
| Document Type: |
article |
| File Description: |
electronic resource |
| Language: |
English |
| ISSN: |
2397-7132 |
| Relation: |
https://doaj.org/toc/2397-7132 |
| DOI: |
10.1038/s41699-024-00519-z |
| Access URL: |
https://doaj.org/article/0b24bf8350ec470bad9d40895d01892d |
| Accession Number: |
edsdoj.0b24bf8350ec470bad9d40895d01892d |
| Database: |
Directory of Open Access Journals |
