One Nanometer HfO2‐Based Ferroelectric Tunnel Junctions on Silicon (Adv. Electron. Mater. 6/2022)
| Title: | One Nanometer HfO2‐Based Ferroelectric Tunnel Junctions on Silicon (Adv. Electron. Mater. 6/2022) |
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| Authors: | Cheema, Suraj S., Shanker, Nirmaan, Hsu, Cheng‐Hsiang, Datar, Adhiraj, Bae, Jongho, Kwon, Daewoong, Salahuddin, Sayeef |
| Source: | Advanced Electronic Materials. 8(6) |
| Availability: | http://explore.bl.uk/primo_library/libweb/action/display.do?tabs=detailsTab&gathStatTab=true&ct=display&fn=search&doc=ETOCvdc_100155654173.0x000001&indx=1&recIds=ETOCvdc_100155654173.0x000001 |
| Database: | British Library Document Supply Centre Inside Serials & Conference Proceedings |
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| RecordInfo | BibRecord: BibEntity: Languages: – Text: English Titles: – TitleFull: One Nanometer HfO2‐Based Ferroelectric Tunnel Junctions on Silicon (Adv. Electron. Mater. 6/2022) Type: main BibRelationships: HasContributorRelationships: – PersonEntity: Name: NameFull: Cheema, Suraj S. – PersonEntity: Name: NameFull: Shanker, Nirmaan – PersonEntity: Name: NameFull: Hsu, Cheng‐Hsiang – PersonEntity: Name: NameFull: Datar, Adhiraj – PersonEntity: Name: NameFull: Bae, Jongho – PersonEntity: Name: NameFull: Kwon, Daewoong – PersonEntity: Name: NameFull: Salahuddin, Sayeef IsPartOfRelationships: – BibEntity: Dates: – D: 01 M: 01 Type: published Y: 2022 Identifiers: – Type: issn-print Value: 2199160X – Type: issn-locals Value: edsbl.Periodical Numbering: – Type: volume Value: 8 – Type: issue Value: 6 Titles: – TitleFull: Advanced Electronic Materials Type: main |
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