Enhanced resistive switching performance in yttrium-doped CH3NH3PbI3 perovskite devicesElectronic supplementary information (ESI) available. See DOI: 10.1039/d1cp02878b

Bibliographic Details
Title: Enhanced resistive switching performance in yttrium-doped CH3NH3PbI3 perovskite devicesElectronic supplementary information (ESI) available. See DOI: 10.1039/d1cp02878b
Authors: Luo, Feifei, Ruan, Liuxia, Tong, Junwei, Wu, Yanzhao, Sun, Caixiang, Qin, Gaowu, Tian, Fubo, Zhang, Xianmin
Source: Physical chemistry chemical physics. 23(38):21757-21768
Availability: http://explore.bl.uk/primo_library/libweb/action/display.do?tabs=detailsTab&gathStatTab=true&ct=display&fn=search&doc=ETOCvdc_100131619684.0x000001&indx=1&recIds=ETOCvdc_100131619684.0x000001
Database: British Library Document Supply Centre Inside Serials & Conference Proceedings
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ISSN:14639076
Published in:Physical chemistry chemical physics
Language:English