Bibliographic Details
| Title: |
10 A/567 V normally off p‐GaN gate HEMT with high‐threshold voltage and low‐gate leakage current |
| Authors: |
Hao, Ronghui, Wu, Dongdong, Fu, Kai, Song, Liang, Chen, Fu, Zhao, Jie, Du, Zhongkai, Zhang, Bingliang, Wang, Qilong, Yu, Guohao, Cheng, Kai, Cai, Yong, Zhang, Xinping, Zhang, Baoshun |
| Source: |
Electronics letters. 54(13):848-849 |
| Availability: |
http://explore.bl.uk/primo_library/libweb/action/display.do?tabs=detailsTab&gathStatTab=true&ct=display&fn=search&doc=ETOCvdc_100113401958.0x000001&indx=1&recIds=ETOCvdc_100113401958.0x000001 |
| Database: |
British Library Document Supply Centre Inside Serials & Conference Proceedings |
