Bibliographic Details
| Title: |
InAs Channel Inset Effects on the DC, RF, and Noise Properties of InP pHEMTs |
| Authors: |
Ruiz, Diego C., Saranovac, Tamara, Han, Daxin, Hambitzer, Anna, Arabhavi, Akshay M., Ostinelli, Olivier, Bolognesi, C. R. |
| Source: |
IEEE transactions on electron devices. 66(11):4685-4691 |
| Availability: |
http://explore.bl.uk/primo_library/libweb/action/display.do?tabs=detailsTab&gathStatTab=true&ct=display&fn=search&doc=ETOCvdc_100096237173.0x000001&indx=1&recIds=ETOCvdc_100096237173.0x000001 |
| Database: |
British Library Document Supply Centre Inside Serials & Conference Proceedings |
