Bibliographic Details
| Title: |
Enhancement-mode n-GaN gate p-channel heterostructure field effect transistors based on GaN/AlGaN 2D hole gas |
| Authors: |
Chen, Fu, Hao, Ronghui, Yu, Guohao, Zhang, Xiaodong, Song, Liang, Wang, Jinyan, Cai, Yong, Zhang, Baoshun |
| Source: |
Applied physics letters. 115(11) |
| Availability: |
http://explore.bl.uk/primo_library/libweb/action/display.do?tabs=detailsTab&gathStatTab=true&ct=display&fn=search&doc=ETOCvdc_100090742126.0x000001&indx=1&recIds=ETOCvdc_100090742126.0x000001 |
| Database: |
British Library Document Supply Centre Inside Serials & Conference Proceedings |
