Ultrafast Pulsed I-V and Charge Pumping Interface Characterization of Low-Voltage n-Channel SiC MOSFETs

Bibliographic Details
Title: Ultrafast Pulsed I-V and Charge Pumping Interface Characterization of Low-Voltage n-Channel SiC MOSFETs
Silicon carbide and related materials (International conference)
Authors: Ekström, M., Malm, B. G., Zetterling, C.
Source: Materials science forum. 1004:642-651
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Database: British Library Document Supply Centre Inside Serials & Conference Proceedings
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ISSN:02555476
Published in:Materials science forum
Language:English