Bibliographic Details
| Title: |
Wafer-level fabrication of fully-dielectric vapor cells for Rydberg atom electrometry |
| Authors: |
Artusio-Glimpse, Alexandra B., Meraki, Adil, Shillingburg, Hunter, Lavallee, Guy, Liu, Miao, Eichfeld, Chad, Simons, Matthew T., Holland, Glenn, Holloway, Christopher L., Aksyuk, Vladimir A., Lopez, Daniel |
| Publication Year: |
2025 |
| Collection: |
Physics (Other) |
| Subject Terms: |
Physics - Atomic Physics |
| More Details: |
Rydberg-atom electrometry enables highly sensitive electric-field measurements by exploiting the extreme polarizability of Rydberg states in alkali atoms. Millimeter-scale atomic vapor cells can be accurately and economically batch-fabricated by anodically bonding silicon and glass wafers, enabling the large-volume manufacturing of miniature atomic clocks and quantum sensors. However, silicon is not always an ideal constitutive material for electric-field sensing because of its high dielectric constant and conductive losses at millimeter wave frequencies. A broader selection of low-loss all-dielectric alternatives may be beneficial for specific applications. Here, we present an all-glass wafer-level microfabrication process that eliminates silicon, creating hermetically sealed vapor cells that are stable over long timelines with embedded cesium dispensers. Femtosecond laser machining precisely defines the cell geometry, and laser-activated alkali loading ensures reliable filling. We demonstrate long-term vacuum stability and robust Rydberg excitation through electromagnetically induced transparency measurements of several Rydberg states. We used these cells to measure a 34 GHz millimeter wave field resonant with the 58D$_{5/2}\rightarrow$60P$_{3/2}$ transition using Autler-Townes splitting showing expected linear dependence with field strength. This work demonstrates that the all-glass approach offers a highly durable low-loss cell alternative for miniaturized millimeter wave and microwave quantum sensing, with the potential to flexibly incorporate a range of other dielectric and semiconductor materials and integrated photonic and electronic technologies. |
| Document Type: |
Working Paper |
| Access URL: |
http://arxiv.org/abs/2503.15433 |
| Accession Number: |
edsarx.2503.15433 |
| Database: |
arXiv |
