| Title: |
Contact Resistance Optimization in MoS${_2}$ Field-Effect Transistors through Reverse Sputtering-Induced Structural Modifications |
| Authors: |
Fa, Yuan, Piacentini, Agata, Macco, Bart, Kalisch, Holger, Heuken, Michael, Vescan, Andrei, Wang, Zhenxing, Lemme, Max C. |
| Publication Year: |
2024 |
| Collection: |
Condensed Matter |
| Subject Terms: |
Condensed Matter - Materials Science, Condensed Matter - Mesoscale and Nanoscale Physics |
| More Details: |
Two-dimensional material (2DM)-based field-effect transistors (FETs), such as molybdenum disulfide (MoS${_2}$)-FETs, have gained significant attention for their potential for ultra-short channels, thereby extending Moore's law. However, MoS${_2}$-FETs are prone to the formation of Schottky barriers at the metal-MoS${_2}$ interface, resulting in high contact resistance (R${_c}$) and, consequently, reduced transistor currents in the ON-state. Our study explores the modification of MoS${_2}$ to induce the formation of conductive 1T-MoS${_2}$ at the metal-MoS${_2}$ interface via reverse sputtering. MoS${_2}$-FETs exposed to optimized reverse sputtering conditions in the contact area show R${_c}$ values reduced to less than 50% of their untreated counterparts. This reduction translates into improvements in other electrical characteristics, such as higher ON-state currents. Since reverse sputtering is a standard semiconductor process that enhances the electrical performance of MoS${_2}$-FETs, it has great potential for broader application scenarios in 2DM-based microelectronic devices and circuits.
Comment: 33 pages |
| Document Type: |
Working Paper |
| Access URL: |
http://arxiv.org/abs/2412.08663 |
| Accession Number: |
edsarx.2412.08663 |
| Database: |
arXiv |
