Unconventional temperature evolution of quantum oscillations in Sn-doped Bi$_{1.1}$Sb$_{0.9}$Te$_{2}$S topological insulator

Bibliographic Details
Title: Unconventional temperature evolution of quantum oscillations in Sn-doped Bi$_{1.1}$Sb$_{0.9}$Te$_{2}$S topological insulator
Authors: Gudac, Bruno, Sačer, Petar, Orbanić, Filip, Kokanović, Ivan, Rukelj, Zoran, Popčević, Petar, Akšamović, Luka, Barišić, Neven Ž., Nurmamat, Munisa, Kimura, Akio, Novak, Mario
Publication Year: 2024
Collection: Condensed Matter
Subject Terms: Condensed Matter - Materials Science
More Details: Among various topological insulators, Sn-doped Bi$_{1.1}$Sb$_{0.9}$Te$_{2}$S stands out for its exceptional properties. It has a wide energy gap and typically exhibits a well-isolated Dirac point and a Fermi level positioned within the gap. The samples we present display metallic-like low-temperature resistivity attributed to surface states, pronounced quantum oscillations observable even at 40 K, and a Fermi level located approximately 100 meV above the Dirac point. In this work, we report an unusual effect: a strong temperature dependence of the quantum oscillation frequency, which decreases by around 10\% between 2 and 40 K. This reduction significantly exceeds the expected effects of the Sommerfeld and topological corrections for Dirac quasi-particles, which could account for only one-eighth of the observed change. We attribute this change to the temperature-induced renormalization of the bulk band gap size due to electron-phonon interactions, which in turn affect the position of the surface Dirac point within the gap. Furthermore, we propose that in this compound, surface quantum oscillations can serve as a precise tool for investigating the low-temperature evolution of the bulk band gap size.
Comment: 7 pages, 3 figures
Document Type: Working Paper
Access URL: http://arxiv.org/abs/2411.05207
Accession Number: edsarx.2411.05207
Database: arXiv
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