Bibliographic Details
| Title: |
High quality epitaxial piezoelectric and ferroelectric wurtzite Al$_{1-x}$Sc$_x$N thin films |
| Authors: |
Zeng, Yang, Lei, Yihan, Wang, Yanghe, Cheng, Mingqiang, Liao, Luocheng, Wang, Xuyang, Ge, Jinxin, Liu, Zhenghao, Ming, Wenjie, Li, Chao, Xie, Shuhong, Li, Jiangyu, Li, Changjian |
| Publication Year: |
2024 |
| Collection: |
Condensed Matter
Physics (Other) |
| Subject Terms: |
Physics - Applied Physics, Condensed Matter - Materials Science |
| More Details: |
Piezoelectric and ferroelectric wurtzite are promising to reshape modern microelectronics because they can be easily integrated with mainstream semiconductor technology. Sc doped AlN (Al$_{1-x}$Sc$_x$N) has attracted much attention for its enhanced piezoelectric and emerging ferroelectric properties, yet the commonly used sputtering results in polycrystalline Al$_{1-x}$Sc$_x$N films with high leakage current. Here we report the pulsed laser deposition of single crystalline epitaxial Al$_{1-x}$Sc$_x$N thin films on sapphire and 4H-SiC substrates. Pure wurtzite phase is maintained up to $x = 0.3$ with minimal oxygen contamination. Polarization is estimated to be 140 $\mu$C/cm$^2$ via atomic scale microscopy imaging and found to be switchable via a scanning probe. The piezoelectric coefficient is found to be 5 times of undoped one when $x = 0.3$, making it desirable for high frequency radiofrequency (RF) filters and three-dimensional nonvolatile memories. |
| Document Type: |
Working Paper |
| Access URL: |
http://arxiv.org/abs/2408.11379 |
| Accession Number: |
edsarx.2408.11379 |
| Database: |
arXiv |
