Bibliographic Details
| Title: |
Extreme Enhancement-Mode Operation Accumulation Channel Hydrogen-Terminated Diamond FETs with $V_{th} < -6V$ and High On-Current |
| Authors: |
Qu, Chunlin, Maini, Isha, Guo, Qing, Stacey, Alastair, Moran, David A. J. |
| Publication Year: |
2024 |
| Collection: |
Condensed Matter |
| Subject Terms: |
Condensed Matter - Mesoscale and Nanoscale Physics |
| More Details: |
In this work we demonstrate a new Field Effect Transistor device concept based on hydrogen-terminated diamond (H-diamond) that operates in an Accumulation Channel rather than Transfer Doping regime. Our FET devices demonstrate both extreme enhancement-mode operation and high on-current with improved channel charge mobility compared to Transfer-Doped equivalents. Electron-beam evaporated $Al_2O_3$ is used on H-diamond to suppress the Transfer Doping mechanism and produce an extremely high ungated channel resistance. A high-quality H-diamond surface with an unpinned Fermi level is crucially achieved, allowing for formation of a high-density hole accumulation layer by gating the entire device channel which is encapsulated in dual-stacks of $Al_2O_3$. Completed devices with gate/channel length of $1 \mu m$ demonstrate record threshold voltage $< -6 V$ with on-current $> 80 mA/mm$. Carrier density and mobility figures extracted by CV analysis indicate high 2D charge density of $~ 2 \times 10^{12} cm^{-2}$ and increased hole mobility of $110 cm^2 /V \cdot s$ in comparison with more traditional Transfer-Doped H-diamond FETs. These results demonstrate the most negative threshold voltage yet reported for H-diamond FETs and highlight a new strategy for the development of high-performance power devices that better exploit diamond's intrinsic dielectric properties and high hole mobility. |
| Document Type: |
Working Paper |
| DOI: |
10.1002/aelm.202400770 |
| Access URL: |
http://arxiv.org/abs/2408.07216 |
| Accession Number: |
edsarx.2408.07216 |
| Database: |
arXiv |
