Bibliographic Details
| Title: |
First-principles Calculations of High Thermal Conductivity in Germanium Carbide Channel Materials |
| Authors: |
Lee, S. -C., Chen, Y. -T., Liu, C. -R., Wang, S. -M., Tang, Y. -T., Chang, F. -S., Li, Z. -X., Hsiang, K. -Y., Lee, M. -H. |
| Publication Year: |
2023 |
| Collection: |
Condensed Matter |
| Subject Terms: |
Condensed Matter - Materials Science |
| More Details: |
Silicon carbide (SiC) has become a popular material for next-generation power components due to its smaller size, faster switching speed, simpler cooling and greater reliability than Si-MOSFETs. With this in mind, we are thinking about whether the replacement of Si-base with Germanium Carbide(GeC) will also have good performance. This work explains the heat transfer of GeC by simulating the thermal conductivity through molecular dynamics (MD) and proposes a potential 4H-GeC power MOSFET with wide bandgap and high thermal conductivity to replace Si-MOSFETs.
Comment: 2 pages, 2 figures, Symposium on Nano-Device Circuits and Technologies, SNDCT 2023 |
| Document Type: |
Working Paper |
| Access URL: |
http://arxiv.org/abs/2307.01114 |
| Accession Number: |
edsarx.2307.01114 |
| Database: |
arXiv |
