Bibliographic Details
| Title: |
Hybrid Si-GaAs photonic crystal cavity for lasing and bistability |
| Authors: |
Rahaman, Mohammad Habibur, Lee, Chang-Min, Buyukkaya, Mustafa Atabey, Zhao, Yuqi, Waks, Edo |
| Publication Year: |
2023 |
| Collection: |
Physics (Other) |
| Subject Terms: |
Physics - Optics |
| More Details: |
The heterogeneous integration of silicon with III-V materials provides a way to overcome silicon's limited optical properties toward a broad range of photonic applications. Hybrid modes are a promising way to make heterogeneous Si/III-V devices, but it is still unclear how to engineer these modes to make photonic crystal cavities. Herein, using 3D finite-difference time-domain simulation, a hybrid Si-GaAs photonic crystal cavity design enables cavity mode confinement in GaAs without directly patterning that operates at telecom wavelengths. The hybrid cavity consists of a patterned silicon waveguide nanobeam that is evanescently coupled to a GaAs slab with quantum dots. We show that by engineering the hybrid modes, we can control the degree of coupling to the active material, which leads to a tradeoff between cavity quality factor and optical gain and nonlinearity. With this design, we demonstrate a cavity mode in the Si-GaAs heterogeneous region, which enables strong interaction with the quantum dots in the GaAs slab for applications such as low-power-threshold lasing and optical bistability (156 nW and 18.1 ${\mu}$W, respectively). This heterogeneous integration of an active III-V material with silicon via a hybrid cavity design suggests a promising approach for achieving on-chip light generation and low-power nonlinear platforms. |
| Document Type: |
Working Paper |
| DOI: |
10.1364/OE.496081 |
| Access URL: |
http://arxiv.org/abs/2302.03152 |
| Accession Number: |
edsarx.2302.03152 |
| Database: |
arXiv |
