Bibliographic Details
| Title: |
Growth of $\alpha-Ga_2O_3$ on $Al_2O_3$ by conventional molecular-beam epitaxy and metal-oxide-catalyzed epitaxy |
| Authors: |
McCandless, J. P., Rowe, D., Pieczulewski, N., Protasenko, V., Alonso-Orts, M., Williams, M. S., Eickhoff, M., Xing, H. G., Muller, D. A., Jena, D., Vogt, P. |
| Publication Year: |
2023 |
| Collection: |
Condensed Matter |
| Subject Terms: |
Condensed Matter - Materials Science |
| More Details: |
We report the growth of $\alpha-Ga_2O_3$ on $m$-plane $Al_2O_3$ by conventional plasma-assisted molecular-beam epitaxy (MBE) and In-mediated metal-oxide-catalyzed epitaxy (MOCATAXY). We report a growth-rate-diagram for $\alpha-Ga_2O_3$ (10-10), and observe (i) a growth rate increase, (ii) an expanded growth window, and (iii) reduced out-of-lane mosaic spread when MOCATAXY is employed for the growth of $\alpha-Ga_2O_3$. Through the use of In-mediated catalysis, growth rates over $0.2\,\mu\text{m}\,\text{hr}^{-1}$ and rocking curves with full width at half maxima of $\Delta\omega \approx 0.45^{\circ}$ are achieved. Faceting is observed along the $\alpha-Ga_2O_3$ film surface and is explored through scanning transmission electron microscopy. |
| Document Type: |
Working Paper |
| DOI: |
10.35848/1347-4065/acbe04 |
| Access URL: |
http://arxiv.org/abs/2301.13053 |
| Accession Number: |
edsarx.2301.13053 |
| Database: |
arXiv |
