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Manufacturing high-Q superconducting {\alpha}-tantalum resonators on silicon wafers

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Title: Manufacturing high-Q superconducting {\alpha}-tantalum resonators on silicon wafers
Authors: Lozano, D. P., Mongillo, M., Piao, X., Couet, S., Wan, D., Canvel, Y., Vadiraj, A. M., Ivanov, Ts., Verjauw, J., Acharya, R., Van Damme, J., Mohiyaddin, F. A., Jussot, J., Gowda, P. P., Pacco, A., Raes, B., Van de Vondel, J., Radu, I. P., Govoreanu, B., Swerts, J., Potočnik, A., De Greve, K.
Publication Year: 2022
Collection: Condensed Matter
Physics (Other)
Quantum Physics
Subject Terms: Quantum Physics, Condensed Matter - Materials Science, Physics - Applied Physics
More Details: The performance of state-of-the-art superconducting quantum devices is currently limited by microwave dielectric losses at different surfaces and interfaces. {\alpha}-tantalum is a superconductor that has proven effective in reducing dielectric loss and improving device performance due to its thin low-loss oxide. However, without the use of a seed layer, this tantalum phase has so far only been realised on sapphire substrates, which is incompatible with advanced processing in industry-scale fabrication facilities. Here, we demonstrate the fabrication of high-quality factor {\alpha}-tantalum resonators directly on silicon wafers over a variety of metal deposition conditions and perform a comprehensive material and electrical characterization study. By comparing experiments with simulated resonator loss, we demonstrate that two-level-system loss is dominated by surface oxide contributions and not the substrate-metal interface. Our study paves the way to large scale manufacturing of low-loss superconducting circuits and to materials-driven advancements in superconducting circuit performance.
Comment: 20 pages, 10 figures
Document Type: Working Paper
DOI: 10.1088/2633-4356/ad4b8c
Access URL: http://arxiv.org/abs/2211.16437
Accession Number: edsarx.2211.16437
Database: arXiv
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  Data: The performance of state-of-the-art superconducting quantum devices is currently limited by microwave dielectric losses at different surfaces and interfaces. {\alpha}-tantalum is a superconductor that has proven effective in reducing dielectric loss and improving device performance due to its thin low-loss oxide. However, without the use of a seed layer, this tantalum phase has so far only been realised on sapphire substrates, which is incompatible with advanced processing in industry-scale fabrication facilities. Here, we demonstrate the fabrication of high-quality factor {\alpha}-tantalum resonators directly on silicon wafers over a variety of metal deposition conditions and perform a comprehensive material and electrical characterization study. By comparing experiments with simulated resonator loss, we demonstrate that two-level-system loss is dominated by surface oxide contributions and not the substrate-metal interface. Our study paves the way to large scale manufacturing of low-loss superconducting circuits and to materials-driven advancements in superconducting circuit performance.<br />Comment: 20 pages, 10 figures
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