Topological Anderson insulators induced by random binary disorders

Bibliographic Details
Title: Topological Anderson insulators induced by random binary disorders
Authors: Liu, Shu-Na, Zhang, Guo-Qing, Tang, Ling-Zhi, Zhang, Dan-Wei
Source: Phys. Lett. A 431 (2022) 128004
Publication Year: 2022
Collection: Condensed Matter
Subject Terms: Condensed Matter - Disordered Systems and Neural Networks, Condensed Matter - Mesoscale and Nanoscale Physics
More Details: Different disorders lead to various localization and topological phenomena in condensed matter and artificial systems. Here we study the topological and localization properties in one-dimensional Su-Schrieffer-Heeger model with spatially correlated random binary disorders. It is found that random binary disorders can induce the topological Anderson insulating phase from the trivial insulator in various parameter regions. The topological Anderson insulators are characterized by the disorder-averaged winding number and localized bulk states revealed by the inverse participation ratio in both real and momentum spaces. We show that the topological phase boundaries are consistent with the analytical results of the self-consistent Born approach and the localization length of zero-energy modes, and discuss how the bimodal probability affects the disorder-induced topological phases. The topological characters can be detected from the mean chiral displacement in atomic or photonic systems. Our work provides an extension of the topological Anderson insulators to the case of correlated disorders.
Comment: 8 pages, 5 figures. Fix incorrect Ref. [92]
Document Type: Working Paper
DOI: 10.1016/j.physleta.2022.128004
Access URL: http://arxiv.org/abs/2202.11905
Accession Number: edsarx.2202.11905
Database: arXiv
More Details
DOI:10.1016/j.physleta.2022.128004