Deterministic Single Ion Implantation with 99.87% Confidence for Scalable Donor-Qubit Arrays in Silicon

Bibliographic Details
Title: Deterministic Single Ion Implantation with 99.87% Confidence for Scalable Donor-Qubit Arrays in Silicon
Authors: Jakob, Alexander M., Robson, Simon G., Schmitt, Vivien, Mourik, Vincent, Posselt, Matthias, Spemann, Daniel, Johnson, Brett C., Firgau, Hannes R., Mayes, Edwin, McCallum, Jeffrey C., Morello, Andrea, Jamieson, David N.
Source: Adv.Mater. 34 (2022) 3
Publication Year: 2020
Collection: Condensed Matter
Physics (Other)
Quantum Physics
Subject Terms: Condensed Matter - Mesoscale and Nanoscale Physics, Physics - Instrumentation and Detectors, Quantum Physics
More Details: The attributes of group-V-donor spins implanted in an isotopically purified $^{28}$Si crystal make them attractive qubits for large-scale quantum computer devices. Important features include long nuclear and electron spin lifetimes of $^{31}$P, hyperfine clock transitions in $^{209}$Bi and electrically controllable $^{123}$Sb nuclear spins. However, architectures for scalable quantum devices require the ability to fabricate deterministic arrays of individual donor atoms, placed with sufficient precision to enable high-fidelity quantum operations. Here we employ on-chip electrodes with charge-sensitive electronics to demonstrate the implantation of single low-energy (14 keV) P$^+$ ions with an unprecedented $99.87\pm0.02$% confidence, while operating close to room-temperature. This permits integration with an atomic force microscope equipped with a scanning-probe ion aperture to address the critical issue of directing the implanted ions to precise locations. These results show that deterministic single-ion implantation can be a viable pathway for manufacturing large-scale donor arrays for quantum computation and other applications.
Comment: 12 pages, 4 figures
Document Type: Working Paper
DOI: 10.1002/adma.202103235
Access URL: http://arxiv.org/abs/2009.02892
Accession Number: edsarx.2009.02892
Database: arXiv
More Details
DOI:10.1002/adma.202103235