Electron-Electron Interactions in 2D Semiconductor InSe

Bibliographic Details
Title: Electron-Electron Interactions in 2D Semiconductor InSe
Authors: Kumar, Arvind Shankar, Premasiri, Kasun, Gao, Min, Kumar, U. Rajesh, Sankar, Raman, Chou, Fang-Cheng, Gao, Xuan P. A.
Source: Phys. Rev. B 102, 121301 (2020)
Publication Year: 2020
Collection: Condensed Matter
Subject Terms: Condensed Matter - Mesoscale and Nanoscale Physics, Condensed Matter - Disordered Systems and Neural Networks, Condensed Matter - Materials Science, Condensed Matter - Strongly Correlated Electrons
More Details: Electron-electron interactions (EEIs) in 2D van der Waals structures is one of the topics with high current interest in physics. We report the observation of a negative parabolic magnetoresistance (MR) in multilayer 2D semiconductor InSe beyond the low-field weak localization/antilocalization regime, and provide evidence for the EEI origin of this MR behavior. Further, we analyze this negative parabolic MR and other observed quantum transport signatures of EEIs (temperature dependent conductance and Hall coefficient) within the framework of Fermi liquid theory and extract the gate voltage tunable Fermi liquid parameter $F_0^\sigma$ which quantifies the electron spin-exchange interaction strength.
Document Type: Working Paper
DOI: 10.1103/PhysRevB.102.121301
Access URL: http://arxiv.org/abs/2004.10879
Accession Number: edsarx.2004.10879
Database: arXiv
More Details
DOI:10.1103/PhysRevB.102.121301