Material design with the van der Waals stacking of bismuth-halide chains realizing a higher-order topological insulator

Bibliographic Details
Title: Material design with the van der Waals stacking of bismuth-halide chains realizing a higher-order topological insulator
Authors: Noguchi, Ryo, Kobayashi, Masaru, Jiang, Zhanzhi, Kuroda, Kenta, Takahashi, Takanari, Xu, Zifan, Lee, Daehun, Hirayama, Motoaki, Ochi, Masayuki, Shirasawa, Tetsuroh, Zhang, Peng, Lin, Chun, Bareille, Cédric, Sakuragi, Shunsuke, Tanaka, Hiroaki, Kunisada, So, Kurokawa, Kifu, Yaji, Koichiro, Harasawa, Ayumi, Kandyba, Viktor, Giampietri, Alessio, Barinov, Alexei, Kim, Timur K., Cacho, Cephise, Hashimoto, Makoto, Lu, Donghui, Shin, Shik, Arita, Ryotaro, Lai, Keji, Sasagawa, Takao, Kondo, Takeshi
Publication Year: 2020
Collection: Condensed Matter
Subject Terms: Condensed Matter - Materials Science
More Details: The van der Waals (vdW) materials with low dimensions have been extensively studied as a platform to generate exotic quantum properties. Advancing this view, a great deal of attention is currently paid to topological quantum materials with vdW structures. Here, we provide a new concept of designing topological materials by the vdW stacking of quantum spin Hall insulators (QSHIs). Most interestingly, a slight shift of inversion center in the unit cell caused by a modification of stacking is found to induce the topological variation from a trivial insulator to a higher-order topological insulator (HOTI). Based on that, we present the first experimental realization of a HOTI by investigating a bismuth bromide Bi4Br4 with angle-resolved photoemission spectroscopy (ARPES). The unique feature in bismuth halides capable of selecting various topology only by differently stacking chains, combined with the great advantage of the vdW structure, offers a fascinating playground for engineering topologically non-trivial edge-states toward future spintronics applications.
Comment: Nature Materials, in press. The final version of this article is available online at https://doi.org/10.1038/s41563-020-00871-7
Document Type: Working Paper
DOI: 10.1038/s41563-020-00871-7
Access URL: http://arxiv.org/abs/2002.01134
Accession Number: edsarx.2002.01134
Database: arXiv
More Details
DOI:10.1038/s41563-020-00871-7