Title: |
Material design with the van der Waals stacking of bismuth-halide chains realizing a higher-order topological insulator |
Authors: |
Noguchi, Ryo, Kobayashi, Masaru, Jiang, Zhanzhi, Kuroda, Kenta, Takahashi, Takanari, Xu, Zifan, Lee, Daehun, Hirayama, Motoaki, Ochi, Masayuki, Shirasawa, Tetsuroh, Zhang, Peng, Lin, Chun, Bareille, Cédric, Sakuragi, Shunsuke, Tanaka, Hiroaki, Kunisada, So, Kurokawa, Kifu, Yaji, Koichiro, Harasawa, Ayumi, Kandyba, Viktor, Giampietri, Alessio, Barinov, Alexei, Kim, Timur K., Cacho, Cephise, Hashimoto, Makoto, Lu, Donghui, Shin, Shik, Arita, Ryotaro, Lai, Keji, Sasagawa, Takao, Kondo, Takeshi |
Publication Year: |
2020 |
Collection: |
Condensed Matter |
Subject Terms: |
Condensed Matter - Materials Science |
More Details: |
The van der Waals (vdW) materials with low dimensions have been extensively studied as a platform to generate exotic quantum properties. Advancing this view, a great deal of attention is currently paid to topological quantum materials with vdW structures. Here, we provide a new concept of designing topological materials by the vdW stacking of quantum spin Hall insulators (QSHIs). Most interestingly, a slight shift of inversion center in the unit cell caused by a modification of stacking is found to induce the topological variation from a trivial insulator to a higher-order topological insulator (HOTI). Based on that, we present the first experimental realization of a HOTI by investigating a bismuth bromide Bi4Br4 with angle-resolved photoemission spectroscopy (ARPES). The unique feature in bismuth halides capable of selecting various topology only by differently stacking chains, combined with the great advantage of the vdW structure, offers a fascinating playground for engineering topologically non-trivial edge-states toward future spintronics applications. Comment: Nature Materials, in press. The final version of this article is available online at https://doi.org/10.1038/s41563-020-00871-7 |
Document Type: |
Working Paper |
DOI: |
10.1038/s41563-020-00871-7 |
Access URL: |
http://arxiv.org/abs/2002.01134 |
Accession Number: |
edsarx.2002.01134 |
Database: |
arXiv |