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Raman scattering studies of the lateral Mn distribution in MBE-grown Ga1-xMnxN epilayers

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Title: Raman scattering studies of the lateral Mn distribution in MBE-grown Ga1-xMnxN epilayers
Authors: Gas, Katarzyna, Hommel, Detlef, Sawicki, Maciej
Source: Journal of Alloys and Compounds 2019
Publication Year: 2019
Collection: Condensed Matter
Subject Terms: Condensed Matter - Materials Science
More Details: Recent interest in very thin single phase Ga1-xMnxN dilute magnetic layers increased needs for precise, non-destructive, and relatively fast characterization methods with key issues being the macroscopic lateral Mn distribution and the absolute values of Mn concentration x. We report on resonantly enhanced UV Raman scattering studies of high quality Ga1-xMnxN layers grown on GaN templated sapphire by molecular beam epitaxy with 4 < x < 9%. The main advantage of the UV excitation is the restriction of the light penetration depth to nearly a hundred nanometers, eliminating signal from the GaN buffer. Under this conditions we determine the dependence of the 1LO phonon frequency on x, what allows for a fine mapping of its lateral distribution over the entire surface of the samples. Our Raman scanning clearly confirms substantial lateral distribution of Mn atoms across the layer, which is radial with respect to its center. From the established distributions in two deliberately chosen layers the magnitude of the optimal growth temperature for most efficient Mn atoms incorporation in epitaxial GaN has been confirmed. It is shown that the combination of the 1LO line width and its energy provides assessment of the crystalline quality of the investigated layers.
Comment: 12 pages, 3 figures
Document Type: Working Paper
DOI: 10.1016/j.jallcom.2019.152789
Access URL: http://arxiv.org/abs/1911.02958
Accession Number: edsarx.1911.02958
Database: arXiv
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  Data: Raman scattering studies of the lateral Mn distribution in MBE-grown Ga1-xMnxN epilayers
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  Data: &lt;searchLink fieldCode=&quot;AR&quot; term=&quot;%22Gas%2C+Katarzyna%22&quot;&gt;Gas, Katarzyna&lt;/searchLink&gt;&lt;br /&gt;&lt;searchLink fieldCode=&quot;AR&quot; term=&quot;%22Hommel%2C+Detlef%22&quot;&gt;Hommel, Detlef&lt;/searchLink&gt;&lt;br /&gt;&lt;searchLink fieldCode=&quot;AR&quot; term=&quot;%22Sawicki%2C+Maciej%22&quot;&gt;Sawicki, Maciej&lt;/searchLink&gt;
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  Data: Journal of Alloys and Compounds 2019
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  Data: Recent interest in very thin single phase Ga1-xMnxN dilute magnetic layers increased needs for precise, non-destructive, and relatively fast characterization methods with key issues being the macroscopic lateral Mn distribution and the absolute values of Mn concentration x. We report on resonantly enhanced UV Raman scattering studies of high quality Ga1-xMnxN layers grown on GaN templated sapphire by molecular beam epitaxy with 4 &lt; x &lt; 9%. The main advantage of the UV excitation is the restriction of the light penetration depth to nearly a hundred nanometers, eliminating signal from the GaN buffer. Under this conditions we determine the dependence of the 1LO phonon frequency on x, what allows for a fine mapping of its lateral distribution over the entire surface of the samples. Our Raman scanning clearly confirms substantial lateral distribution of Mn atoms across the layer, which is radial with respect to its center. From the established distributions in two deliberately chosen layers the magnitude of the optimal growth temperature for most efficient Mn atoms incorporation in epitaxial GaN has been confirmed. It is shown that the combination of the 1LO line width and its energy provides assessment of the crystalline quality of the investigated layers.&lt;br /&gt;Comment: 12 pages, 3 figures
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      – TitleFull: Raman scattering studies of the lateral Mn distribution in MBE-grown Ga1-xMnxN epilayers
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