Theory of bi-linear magnetoresistance within the minimal model for surface states in topological insulators

Bibliographic Details
Title: Theory of bi-linear magnetoresistance within the minimal model for surface states in topological insulators
Authors: Dyrdał, A., Barnaś, J., Fert, A.
Source: Phys. Rev. Lett. 124, 046802 (2020)
Publication Year: 2019
Collection: Condensed Matter
Subject Terms: Condensed Matter - Mesoscale and Nanoscale Physics
More Details: A new mechanism of bi-linear magnetoresistance (BMR) is studied theoretically within the minimal model describing surface electronic states in topological insulators (TIs). The BMR appears as a consequence of the second-order response to electric field, and depends linearly on both electric field (current) and magnetic field. The mechanism is based on the interplay of current-induced spin polarization and scattering processes due to peculiar spin-orbit defects. The proposed mechanism is compared to that based on a Fermi surface warping, and is shown to be dominant at lower Fermi energies. We provide a consistent theoretical approach based on the Green function formalism and show that the magnetic field dependent relaxation processes in the presence of non-equilibrium current-induced spin polarization give rise to the BMR.
Document Type: Working Paper
DOI: 10.1103/PhysRevLett.124.046802
Access URL: http://arxiv.org/abs/1908.08575
Accession Number: edsarx.1908.08575
Database: arXiv
More Details
DOI:10.1103/PhysRevLett.124.046802