Bibliographic Details
| Title: |
Energetics and electronic structure of native point defects in ${\alpha}$-Ga2O3 |
| Authors: |
Kobayashi, Takuma, Gake, Tomoya, Kumagai, Yu, Oba, Fumiyasu, Matsushita, Yu-ichiro |
| Source: |
Appl. Phys. Express 12 (2019) 091001 |
| Publication Year: |
2019 |
| Collection: |
Condensed Matter |
| Subject Terms: |
Condensed Matter - Materials Science |
| More Details: |
We report first-principles calculations that clarify the formation energies and charge transition levels of native point defects (Ga and O vacancies, interstitials, and a Ga vacancy-O vacancy pair) in corundum structured ${\alpha}$-Ga2O3. Either under a Ga- or O-rich growth condition, the negatively-charged Ga vacancy and the positively-charged Ga interstitial on a site surrounded by six O atoms are dominant when the Fermi level approaches the conduction and valence band edges, respectively. These defects would compensate carrier electrons and holes, respectively. Ga-rich conditions relatively suppress the formation of the Ga vacancy and, therefore, are suited for extrinsic n-type doping of ${\alpha}$-Ga2O3.
Comment: 14 pages, 4 figures |
| Document Type: |
Working Paper |
| DOI: |
10.7567/1882-0786/ab3763 |
| Access URL: |
http://arxiv.org/abs/1906.03765 |
| Accession Number: |
edsarx.1906.03765 |
| Database: |
arXiv |
