Electronic structure of a graphene-like artificial crystal of $NdNiO_3$

Bibliographic Details
Title: Electronic structure of a graphene-like artificial crystal of $NdNiO_3$
Authors: Arab, Arian, Liu, Xiaoran, Köksal, O., Yang, W., Chandrasena, R. U., Middey, S., Kareev, M., Kumar, S., Husanu, M. -A., Yang, Z., Gu, L., Strocov, V. N., Lee, T. -L., Minár, J., Pentcheva, R., Chakhalian, J., Gray, A. X.
Publication Year: 2019
Collection: Condensed Matter
Subject Terms: Condensed Matter - Strongly Correlated Electrons
More Details: Artificial complex-oxide heterostructures containing ultrathin buried layers grown along the pseudocubic [111] direction have been predicted to host a plethora of exotic quantum states arising from the graphene-like lattice geometry and the interplay between strong electronic correlations and band topology. To date, however, electronic-structural investigations of such atomic layers remain an immense challenge due to the shortcomings of conventional surface-sensitive probes, with typical information depths of a few Angstroms. Here, we use a combination of bulk-sensitive soft x-ray angle-resolved photoelectron spectroscopy (SX-ARPES), hard x-ray photoelectron spectroscopy (HAXPES) and state-of-the-art first-principles calculations to demonstrate a direct and robust method for extracting momentum-resolved and angle-integrated valence-band electronic structure of an ultrathin buckled graphene-like layer of $NdNiO_3$ confined between two 4-unit cell-thick layers of insulating $LaAlO_3$. The momentum-resolved dispersion of the buried Ni d states near the Fermi level obtained via SX-ARPES is in excellent agreement with the first-principles calculations and establishes the realization of an antiferro-orbital order in this artificial lattice. The HAXPES measurements reveal the presence of a valence-band (VB) bandgap of 265 meV. Our findings open a promising avenue for designing and investigating quantum states of matter with exotic order and topology in a few buried layers.
Document Type: Working Paper
DOI: 10.1021/acs.nanolett.9b03962
Access URL: http://arxiv.org/abs/1905.11441
Accession Number: edsarx.1905.11441
Database: arXiv
More Details
DOI:10.1021/acs.nanolett.9b03962