Bibliographic Details
| Title: |
Interface-engineered hole doping in Sr2IrO4/LaNiO3 heterostructure |
| Authors: |
Wen, Fangdi, Liu, Xiaoran, Zhang, Qinghua, Kareev, M., Pal, B., Cao, Yanwei, Freeland, J. W., N'Diaye, A. T., Shafer, P., Arenholz, E., Gu, Lin, Chakhalian, J. |
| Publication Year: |
2019 |
| Collection: |
Condensed Matter |
| Subject Terms: |
Condensed Matter - Strongly Correlated Electrons |
| More Details: |
The relativistic Mott insulator Sr2IrO4 driven by large spin-orbit interaction is known for the Jeff = 1/2 antiferromagnetic state which closely resembles the electronic structure of parent compounds of superconducting cuprates. Here, we report the realization of hole-doped Sr2IrO4 by means of interfacial charge transfer in Sr2IrO4/LaNiO3 heterostructures. X-ray photoelectron spectroscopy on Ir 4f edge along with the X-ray absorption spectroscopy at Ni L2 edge confirmed that 5d electrons from Ir sites are transferred onto Ni sites, leading to markedly electronic reconstruction at the interface. Although the Sr2IrO4/LaNiO3 heterostructure remains non-metallic, we reveal that the transport behavior is no longer described by the Mott variable range hopping mode, but by the Efros-Shklovskii model. These findings highlight a powerful utility of interfaces to realize emerging electronic states of the Ruddlesden-Popper phases of Ir-based oxides.
Comment: 9 pages including 3 figures and references |
| Document Type: |
Working Paper |
| Access URL: |
http://arxiv.org/abs/1905.01550 |
| Accession Number: |
edsarx.1905.01550 |
| Database: |
arXiv |
