Bibliographic Details
| Title: |
Pressure-induced superconductivity in layered pnictogen diselenide NdO$_{0.8}$F$_{0.2}$Sb$_{1-x}$Bi$_x$Se$_2$ (x = 0.3 and 0.7) |
| Authors: |
Matsumoto, Ryo, Goto, Yosuke, Yamamoto, Sayaka, Sudo, Kenta, Usui, Hidetomo, Miura, Akira, Moriyoshi, Chikako, Kuroiwa, Yoshihiro, Adachi, Shintaro, Irifune, Tetsuo, Takeya, Hiroyuki, Tanaka, Hiromi, Kuroki, Kazuhiko, Mizuguchi, Yoshikazu, Takano, Yoshihiko |
| Source: |
Phys. Rev. B 100, 094528 (2019) |
| Publication Year: |
2019 |
| Collection: |
Condensed Matter |
| Subject Terms: |
Condensed Matter - Superconductivity, Condensed Matter - Materials Science |
| More Details: |
Polycrystalline samples of layered pnictogen diselenide NdO0.8F0.2Sb1-xBixSe2 (x = 0 to 0.8) were successfully synthesized by solid-state reactions. Electrical resistivity in the synthesized samples was systematically decreased with an increase in Bi content x. Crystal structure analysis using synchrotron X-ray diffraction suggests that insulator to metal transition upon Bi doping correlates with anomalous change in c-axis length and/or corrugation in conducting layer. The emergence of superconductivity under high pressure is demonstrated using diamond anvil cell (DAC) with boron-doped diamond electrodes, for x = 0.3 and 0.7 as the representative samples. For Sb-rich one (x = 0.3), we observed a superconducting transition with Tconset = 5.3 K at 50 GPa, which is the first-ever report of the superconductivity in layered SbCh2-based (Ch: chalcogen) compounds. The Tconset of x = 0.3 increased with increasing pressure and reached 7.9 K at 70.8 GPa, followed by the gradual decrease in Tc up to 90 GPa. For Bi-rich one (x = 0.7), a superconducting transition with Tconset = 5.9 K was observed at 43.5 GPa, which is the almost comparable to that of x = 0.3; besides, upper critical field (Hc2) is evaluated to be ~10 T for x = 0.7, which is higher than that of x = 0.3 (Hc2 = 6.7 T at 50 GPa). |
| Document Type: |
Working Paper |
| DOI: |
10.1103/PhysRevB.100.094528 |
| Access URL: |
http://arxiv.org/abs/1903.07791 |
| Accession Number: |
edsarx.1903.07791 |
| Database: |
arXiv |
