Bibliographic Details
| Title: |
Giant Tunneling Magnetoresistance in Spin-Filter van der Waals Heterostructures |
| Authors: |
Song, Tiancheng, Cai, Xinghan, Tu, Matisse Wei-Yuan, Zhang, Xiaoou, Huang, Bevin, Wilson, Nathan P., Seyler, Kyle L., Zhu, Lin, Taniguchi, Takashi, Watanabe, Kenji, McGuire, Michael A., Cobden, David H., Xiao, Di, Yao, Wang, Xu, Xiaodong |
| Publication Year: |
2018 |
| Collection: |
Condensed Matter |
| Subject Terms: |
Condensed Matter - Mesoscale and Nanoscale Physics |
| More Details: |
Magnetic multilayer devices that exploit magnetoresistance are the backbone of magnetic sensing and data storage technologies. Here we report novel multiple-spin-filter magnetic tunnel junctions (sf-MTJs) based on van der Waals (vdW) heterostructures in which atomically thin chromium triiodide (CrI3) acts as a spin-filter tunnel barrier sandwiched between graphene contacts. We demonstrate tunneling magnetoresistance which is drastically enhanced with increasing CrI3 layer thickness, reaching a record 19,000% for magnetic multilayer structures using four-layer sf-MTJs at low temperatures. These devices also show multiple resistance states as a function of magnetic field, suggesting the potential for multi-bit functionalities using an individual vdW sf-MTJ. Using magnetic circular dichroism measurements, we attribute these effects to the intrinsic layer-by-layer antiferromagnetic ordering of the atomically thin CrI3. Our work reveals the possibility to push magnetic information storage to the atomically thin limit, and highlights CrI3 as a superlative magnetic tunnel barrier for vdW heterostructure spintronic devices.
Comment: Submitted |
| Document Type: |
Working Paper |
| DOI: |
10.1126/science.aar4851 |
| Access URL: |
http://arxiv.org/abs/1801.08679 |
| Accession Number: |
edsarx.1801.08679 |
| Database: |
arXiv |
