| Title: |
Highly Non-linear and Reliable Amorphous Silicon Based Back-to-Back Schottky Diode as Selector Device for Large Scale RRAM Arrays |
| Authors: |
Hsieh, Cheng-Chih, Chang, Yao-Feng, Chen, Ying-Chen, Chang, Heng-Lu, Shahrjerdi, Davood, Banerjee, Sanjay. K. |
| Publication Year: |
2016 |
| Collection: |
Condensed Matter |
| Subject Terms: |
Condensed Matter - Mesoscale and Nanoscale Physics |
| More Details: |
In this work we present silicon process compatible, stable and reliable ($>10^{8}$cycles), high non-linearity ratio at half-read voltage ($>5\times 10^{5}$), high speed ($<60ns$) low operating voltage ($<2V$) back-to-back Schottky diodes. Materials choice of electrode, thickness of semiconductor layer and doping level are investigated by numerical simulation, experiments and current-voltage equations to give a general design consideration when back-to-back Schottky diodes are used as selector device for Resistive Random Access Memory(RRAM) arrays. |
| Document Type: |
Working Paper |
| Access URL: |
http://arxiv.org/abs/1605.02757 |
| Accession Number: |
edsarx.1605.02757 |
| Database: |
arXiv |
