Bibliographic Details
| Title: |
A Study of CVD Growth Parameters to Fill 50-μm-Deep 4H-SiC Trenches |
| Authors: |
Ji, Shi Yang, Kosugi, Ryoji, Kojima, Kazutoshi, Adachi, Kohei, Kawada, Yasuyuki, Mochizuki, Kazuhiro, Nagata, Akiyo, Matsukawa, Yasuko, Yonezawa, Yoshiyuki, Yoshida, Sadafumi, Okumura, Hajime |
| Source: |
Materials Science Forum; July 2019, Vol. 963 Issue: 1 p131-135, 5p |
| Abstract: |
By inspecting the CVD growth parameters, such as the flow rates of HCl and H2 carrier gases, the pressure and the C/Si ratio, the trench filling in a high-rate mode with a high growth rate on the bottom and a relatively low growth rate on the mesa top was carried out. 4H-SiC trenches with the depths of 48 and 55 μm have been completely filled at the rates of 6.2 and 5.5 μm/h, respectively. |
| Database: |
Supplemental Index |
