Bibliographic Details
| Title: |
CVD Filling of Narrow Deep 4H-SiC Trenches in a Quasi-Selective Epitaxial Growth Mode |
| Authors: |
Ji, Shi Yang, Kosugi, Ryoji, Kojima, Kazutoshi, Mochizuki, Kazuhiro, Kawada, Yasuyuki, Adachi, Kohei, Saito, Shingo, Nagata, Akiyo, Matsukawa, Yasuko, Yonezawa, Yoshiyuki, Yoshida, Sadafumi, Okumura, Hajime |
| Source: |
Materials Science Forum; June 2018, Vol. 924 Issue: 1 p116-119, 4p |
| Abstract: |
By mapping the source and HCl flow rates dependent growth rates, the evolving trend of a quasi-selective epitaxial growth (quasi-SEG) that growing very thin epilayer on mesa top and ensuring an extremely low risk of voids defect generation was firstly figured out on a 5-μm 4H-SiC trench. Then, basing on the acquired knowledge, a 25-μm 4H-SiC trench with an aspect ratio up to ~10 was completely filled in the quasi-SEG mode. |
| Database: |
Supplemental Index |
