Bibliographic Details
| Title: |
Self-driven near-infrared photodetectors based on Sb2Te3/n-Si heterostructures with low dark current and fast response. |
| Authors: |
Zhou, Hongxi, Li, Yufeng, Wei, Yuchao, Wei, Laijiang, Yang, Ming, Chen, Chao, Han, Jiayue, Wu, Zhiming, Wang, Jun, Jiang, Yadong |
| Source: |
Journal of Materials Chemistry C; 3/21/2025, Vol. 13 Issue 11, p5846-5854, 9p |
| Abstract: |
Near-infrared (NIR) photodetectors profoundly influence numerous domains, including military security, biomedical applications, and remote sensing technologies. However, the majority of cutting-edge infrared photoelectric materials are prohibitively expensive and incompatible with the CMOS process, such as InGaAs. Antimony telluride (Sb2Te3), a third-generation topological insulator (TI), has demonstrated considerable potential for infrared detection due to its high absorption and mobility. Notably, Sb2Te3 is recognized as a promising candidate for the monolithic integration with silicon, furthering its applicability. By leveraging magnetron sputtering and rapid annealing, we have developed an antimony telluride/n-silicon (Sb2Te3/n-Si) heterojunction photodetector with an ultrafast response time (τon ∼ 160 μs, τoff ∼ 50 μs), extremely low dark current (10−11 A), and an enhanced light-on/off ratio of up to 103. The device exhibits a remarkable detectivity of 1.2 × 1011 Jones and a self-powered photo-response characteristic across the 405–1310 nm range. In addition, the fabricated 3 × 3 pixel device array shows high uniformity and reproducibility. This presents a promising approach for advancing the development of superior and low-cost photodetectors. [ABSTRACT FROM AUTHOR] |
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| Database: |
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