Bibliographic Details
| Title: |
Chasing Schottky–Mott: Metal-first non-alloyed contacts to β-Ga2O3 for interface quality and minimal surface modification. |
| Authors: |
Smith, Kathleen T., Gorsak, Cameron A., Buontempo, Joshua T., Cromer, Bennett J., Ikenoue, Takumi, Gulupalli, Hemant, Thompson, Michael O., Jena, Debdeep, Nair, Hari P., Xing, Huili Grace |
| Source: |
Journal of Applied Physics; 12/7/2024, Vol. 136 Issue 21, p1-10, 10p |
| Subject Terms: |
METALWORK, OHMIC contacts, X-ray photoelectron spectroscopy, PARTIAL oxidation, OXIDATION-reduction reaction |
| Abstract: |
Metal-first non-alloyed ohmic and Schottky contacts are fabricated on β -Ga 2 O 3 with a range of metal work functions (ϕ M). The resulting ohmic contacts are of high quality with a contact resistance (R c) as low as 0.069 ± 0.003 Ω mm. Measurements of the barrier heights (ϕ B) indicate that metal-first processing, which preserves the as-grown/bare-substrate surface, also partially un-pins the Fermi-level in (010) and ( 2 ¯ 01) oriented Ga 2 O 3. Depth-resolved XPS (x-ray photoelectron spectroscopy) measurements of the oxidation state throughout the contact metal at the contact– Ga 2 O 3 interface indicate that most non-alloyed contact metals are at least partially oxidized by room temperature redox reactions with the underlying Ga 2 O 3 , with metals with a lower ϕ M also demonstrating the greatest level of oxidation. As oxidation has been previously observed to enhance a metal's work function, this may imply that to-date observations of indices of surface behavior << 1 on β -Ga 2 O 3 , which have been attributed to severe Fermi-level pinning, may need to be corrected to account for this partial oxidation in addition to other surface modifications during device processing demonstrated in this work. [ABSTRACT FROM AUTHOR] |
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| Database: |
Complementary Index |
