Investigation of structure, morphology, dielectric, and optoelectronic properties of La-doped BaZrO3: experimental and DFT analysis.

Bibliographic Details
Title: Investigation of structure, morphology, dielectric, and optoelectronic properties of La-doped BaZrO3: experimental and DFT analysis.
Authors: Ayyaz, Ahmad, Murtaza, G., Alkhaldi, Huda, Alhummiany, Haya, Ahmed, Akhlaq, Abd-Rabboh, Hisham S. M., Mahmood, Q., Al-Buriahi, M. S., Ali, H. Elhosiny
Source: Journal of Materials Science: Materials in Electronics; Nov2024, Vol. 35 Issue 33, p1-18, 18p
Abstract: In this work, Ba1-xLaxZrO3 (x = 0, 0.04, 0.08, 0.12, 0.16) samples were prepared using a solid-state reaction method. The analysis of XRD patterns ensured the cubic structures with space group Pm3m and lattice parameters by Rietveld refinement. The density functional theory (DFT) has been employed to study the electronic band structure and density of states. The field emission scanning electron microscope (FESEM) is used to investigate the surface morphology of studied samples and calculate the average grain size in the 0.2 to 0.8 µm range. Fourier transform infrared (FTIR) spectroscopy observes the existence of functional bonding in all samples. The dielectric and impedance measurements have been carried out using electrochemical impedance spectroscopy (EIS) in the high-frequency region. The electronic and optical of pure BaZrO3 and Ba1-xLaxZrO3 (x = 0.12) are computed by density functional theory (DFT) calculations. The BaZrO3 has an indirect band gap of 3.52 eV, whereas Ba1-xLaxZrO3 (x = 0.12) reveals a direct band gap of 3.36 eV. The band gap transitions from an indirect to a direct band gap with La-doping. The optical characteristics, such as dielectric constants, absorption coefficient, reflection, refractive index, optical conductivity, and optical loss, are investigated, and Ba1-xLaxZrO3 (x = 0.12) responds optically well to the ultraviolet range. This analysis suggests that Ba1-xLaxZrO3 is a suitable candidate for UV-based photovoltaics and photodetectors. [ABSTRACT FROM AUTHOR]
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Database: Complementary Index
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ISSN:09574522
DOI:10.1007/s10854-024-13878-6
Published in:Journal of Materials Science: Materials in Electronics
Language:English