Bibliographic Details
| Title: |
Performance Enhancement of P3HT-Based OFET Using Ca-Doped ZnO Nanoparticles. |
| Authors: |
Erouel, Mohsen, Mansouri, Salaheddine, Diallo, Abdou Karim, El Mir, Lassaad |
| Source: |
Journal of Electronic Materials; Oct2024, Vol. 53 Issue 10, p6524-6535, 12p |
| Subject Terms: |
ORGANIC field-effect transistors, OPTICAL films, TRANSMISSION electron microscopy, THIN films, X-ray diffraction |
| Abstract: |
Calcium (Ca)-doped zinc oxide (ZnO) with 1 wt.% and 3 wt.% Ca content (CZO_1% and CZO_3%) and pure ZnO (ZO) nanoparticles (NPs) were synthesized using the sol–gel method. The X-ray diffraction (XRD) patterns and transmission electron microscopy (TEM) observations showed that calcium was incorporated in the ZnO lattice, the crystallites were nanometric in size, and the obtained NPs were prismatic in shape with sizes ranging from 40 nm to 60 nm agglomerated microspheres. Poly(3-hexylthiophene-2.5-diyl) (P3HT):ZO (PZO_50, PZO_100, and PZO_150), CZO_1% (PCZO1%_50, PCZO1%_100, and PCZO1%_150), and CZO_3% (PCZO3%_50, PCZO3%_100, and PCZO3%_150) blend thin films were prepared at a ratio from 0 mg to 150 mg. The optical characterization carried out on the P3HT:ZO, P3HT:CZO_1%, and P3HT:CZO_3% layers showed that the incorporation of pure and Ca-doped ZnO NPs had a weak influence on the chain structure and the optical gap of P3HT. The direct-bandgap energy varied with doping from 1.85 to 1.89 for ZO, 1.72 eV to 1.83 eV for PCZO_1%, and 1.69 to 1.80 for PCZO_3%. Organic field-effect transistors (OFETs) based on PZO_50, PZO_100, PZO_150, PCZO1%_50, PCZO1%_100, and PCZO1%_150, PCZO3%_50, PCZO3%_100, and PCZO3%_150 thin films used as active layers were successfully fabricated at low temperature. The electrical characterization of the nine OFETs was performed by comparison in ambient air. The results showed that the PCZO1%_150 exhibited better electrical performance, with saturation mobility (μsat) of 1.3 × 10−3 cm2 V−1 s−1. [ABSTRACT FROM AUTHOR] |
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| Database: |
Complementary Index |
