Structural design of BaSi2 solar cells with a-SiC electron-selective transport layers.
| Title: | Structural design of BaSi |
|---|---|
| Authors: | Du, Rui, Aonuki, Sho, Hasebe, Hayato, Kido, Kazuki, Takenaka, Haruki, Toko, Kaoru, Mesuda, Masami, Suemasu, Takashi |
| Source: | Japanese Journal of Applied Physics; 5/5/2023, Vol. 62 Issue SD, p1-7, 7p |
| Abstract: | Sputter-deposited polycrystalline BaSi |
| Copyright of Japanese Journal of Applied Physics is the property of IOP Publishing and its content may not be copied or emailed to multiple sites or posted to a listserv without the copyright holder's express written permission. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.) | |
| Database: | Complementary Index |
| FullText | Links: – Type: other Text: Availability: 0 CustomLinks: – Url: https://login.libproxy.scu.edu/login?url=http://stacks.iop.org/0021-4922/62/1 Name: Institute of Physics Category: fullText Text: Full Text from the Institute of Physics MouseOverText: Full Text from the Institute of Physics – Url: https://resolver.ebsco.com/c/xy5jbn/result?sid=EBSCO:edb&genre=article&issn=00214922&ISBN=&volume=62&issue=SD&date=20230505&spage=1&pages=1-7&title=Japanese Journal of Applied Physics&atitle=Structural%20design%20of%20BaSi2%20solar%20cells%20with%20a-SiC%20electron-selective%20transport%20layers.&aulast=Du%2C%20Rui&id=DOI:10.35848/1347-4065/acab09 Name: Full Text Finder (for New FTF UI) (s8985755) Category: fullText Text: Find It @ SCU Libraries MouseOverText: Find It @ SCU Libraries |
|---|---|
| Header | DbId: edb DbLabel: Complementary Index An: 163800759 RelevancyScore: 973 AccessLevel: 6 PubType: Academic Journal PubTypeId: academicJournal PreciseRelevancyScore: 973.294067382813 |
| IllustrationInfo | |
| Items | – Name: Title Label: Title Group: Ti Data: Structural design of BaSi<subscript>2</subscript> solar cells with a-SiC electron-selective transport layers. – Name: Author Label: Authors Group: Au Data: <searchLink fieldCode="AR" term="%22Du%2C+Rui%22">Du, Rui</searchLink><br /><searchLink fieldCode="AR" term="%22Aonuki%2C+Sho%22">Aonuki, Sho</searchLink><br /><searchLink fieldCode="AR" term="%22Hasebe%2C+Hayato%22">Hasebe, Hayato</searchLink><br /><searchLink fieldCode="AR" term="%22Kido%2C+Kazuki%22">Kido, Kazuki</searchLink><br /><searchLink fieldCode="AR" term="%22Takenaka%2C+Haruki%22">Takenaka, Haruki</searchLink><br /><searchLink fieldCode="AR" term="%22Toko%2C+Kaoru%22">Toko, Kaoru</searchLink><br /><searchLink fieldCode="AR" term="%22Mesuda%2C+Masami%22">Mesuda, Masami</searchLink><br /><searchLink fieldCode="AR" term="%22Suemasu%2C+Takashi%22">Suemasu, Takashi</searchLink> – Name: TitleSource Label: Source Group: Src Data: Japanese Journal of Applied Physics; 5/5/2023, Vol. 62 Issue SD, p1-7, 7p – Name: Abstract Label: Abstract Group: Ab Data: Sputter-deposited polycrystalline BaSi<subscript>2</subscript> films capped with a 5 nm thick a-SiC layer showed high photoresponsivity. This means that the a-SiC layer functions as a capping layer to prevent surface oxidation of BaSi<subscript>2</subscript>. Based on the measured absorption edge, the electron affinity of the a-SiC layer, and the work function of the TiN layer, the a-SiC is considered to act as an electron transport layer (ETL) for the BaSi<subscript>2</subscript> light absorber layer/a-SiC interlayer/TiN contact structure in a BaSi<subscript>2</subscript> solar cell. Using a 10 nm thick p<superscript>+</superscript>-BaSi<subscript>2</subscript> layer as a hole transport layer, we investigated the effect of the BaSi<subscript>2</subscript>/a-SiC layered structure on the device performance of a BaSi<subscript>2</subscript>-pn homojunction solar cell by a one-dimensional device simulator (AFORS-HET v2.5). The a-SiC ETL effectively separates photogenerated carriers and allows transport of electrons while blocking holes to achieve an efficiency of 22% for a 500 nm thick BaSi<subscript>2</subscript> light absorber layer. [ABSTRACT FROM AUTHOR] – Name: Abstract Label: Group: Ab Data: <i>Copyright of Japanese Journal of Applied Physics is the property of IOP Publishing and its content may not be copied or emailed to multiple sites or posted to a listserv without the copyright holder's express written permission. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.) |
| PLink | https://login.libproxy.scu.edu/login?url=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edb&AN=163800759 |
| RecordInfo | BibRecord: BibEntity: Identifiers: – Type: doi Value: 10.35848/1347-4065/acab09 Languages: – Code: eng Text: English PhysicalDescription: Pagination: PageCount: 7 StartPage: 1 Titles: – TitleFull: Structural design of BaSi2 solar cells with a-SiC electron-selective transport layers. Type: main BibRelationships: HasContributorRelationships: – PersonEntity: Name: NameFull: Du, Rui – PersonEntity: Name: NameFull: Aonuki, Sho – PersonEntity: Name: NameFull: Hasebe, Hayato – PersonEntity: Name: NameFull: Kido, Kazuki – PersonEntity: Name: NameFull: Takenaka, Haruki – PersonEntity: Name: NameFull: Toko, Kaoru – PersonEntity: Name: NameFull: Mesuda, Masami – PersonEntity: Name: NameFull: Suemasu, Takashi IsPartOfRelationships: – BibEntity: Dates: – D: 05 M: 05 Text: 5/5/2023 Type: published Y: 2023 Identifiers: – Type: issn-print Value: 00214922 Numbering: – Type: volume Value: 62 – Type: issue Value: SD Titles: – TitleFull: Japanese Journal of Applied Physics Type: main |
| ResultId | 1 |