Bibliographic Details
| Title: |
Structural design of BaSi2 solar cells with a-SiC electron-selective transport layers. |
| Authors: |
Du, Rui, Aonuki, Sho, Hasebe, Hayato, Kido, Kazuki, Takenaka, Haruki, Toko, Kaoru, Mesuda, Masami, Suemasu, Takashi |
| Source: |
Japanese Journal of Applied Physics; 5/5/2023, Vol. 62 Issue SD, p1-7, 7p |
| Abstract: |
Sputter-deposited polycrystalline BaSi2 films capped with a 5 nm thick a-SiC layer showed high photoresponsivity. This means that the a-SiC layer functions as a capping layer to prevent surface oxidation of BaSi2. Based on the measured absorption edge, the electron affinity of the a-SiC layer, and the work function of the TiN layer, the a-SiC is considered to act as an electron transport layer (ETL) for the BaSi2 light absorber layer/a-SiC interlayer/TiN contact structure in a BaSi2 solar cell. Using a 10 nm thick p+-BaSi2 layer as a hole transport layer, we investigated the effect of the BaSi2/a-SiC layered structure on the device performance of a BaSi2-pn homojunction solar cell by a one-dimensional device simulator (AFORS-HET v2.5). The a-SiC ETL effectively separates photogenerated carriers and allows transport of electrons while blocking holes to achieve an efficiency of 22% for a 500 nm thick BaSi2 light absorber layer. [ABSTRACT FROM AUTHOR] |
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| Database: |
Complementary Index |
